Effects of temperature variation (300–600 K) in MOSFET modeling in 6H–silicon carbide

Silicon carbide (SiC) based devices perform very well in severe environments and show excellent device characteristics at very high temperatures and in high radiation environments. An analytical model for a lateral MOSFET that includes the effects of temperature variation in 6H–SiC poly-type has been developed. The effects of elevated ambient and substrate temperatures (300–600 K) on the electrical characteristics as well as the variation of large and small signal parameters of the lateral MOSFET have been studied. The model includes the effects of temperature on the threshold voltage, carrier mobility, the body leakage current, and the drain and source contact region resistances. The MOSFET output characteristics and parameter values have been compared with previously measured experimental data. A good agreement between the analytical model and the experimental data has been observed. 2003 Elsevier Ltd. All rights reserved.